Citations:DIPMeIn

English citations of DIPMeIn

• 2009, Wikianswers at Answers.com,

  Question: "What are the advantages of DIPMeIn as the liquid indium source?":

  Answer: The main advantages are (1) liquid indium compound (2) high vapor pressure (3) high thermal stability (4) single compound and not a solution mixture, (5) stable delivery for indium deposition, and (6) less hazardous indium source.

  Common solid sources of indium are its salts (like halides and carboxylates). These salts have extremely low vapor pressures, so they are not useful for the deposition of indium metal and semiconductors. TMIn (Trimethylindium) is the preferred solid organometallic indium source for chemical vapour deposition (MOCVD), but getting stable evaporation of TMIn is a big challenge because of its constantly changing surface area. To solve this problem, new liquid source DIPMeIn (Di-Iso-Propyl-Methyl-Indium) is invented. It is reported as organic indium compound with acceptable vapor pressure for MOCVD and higher thermal stability than TMIn.

• 2008, Deodatta V. Shenai-Khatkhate and Egbert Woelk., US Patent 7,390,360, "Organometallic Compounds":

  Lists DIPMeIn as source for Indium Phosphide semiconductors and catalyst for III-V MOCVD.

• 2007, Deodatta V. Shenai-Khatkhate et al., "Stable vapor transportation of solid sources in MOVPE of III–V compound semiconductors",

  Journal of Crystal Growth volume 298, page 176, doi:10.1016/j.jcrysgro.2006.10.195:

  Various alternative liquid indium precursors, such as triethylindium (TEIn), dimethylaminopropyl dimethylindium (DADI), di-isopropylmethylindium (DIPMeIn), ethyldimethylindium (EDMIn) and "Solution TMI" (i.e. mixtures of TMI with either amines or ethers or hydrocarbons) have been tried so far […]

• 2004, Deodatta V. Shenai-Khatkhate and Ronald L. DiCarlo, Jr., US Patent 6,680,397, "Organoindium Compounds"

  Lists DIPMeIn as the novel liquid indium source for MOCVD.:

  Abstract: "Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds."