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  1. Dimethylamino-Germanium-Chloride, the metalorganic source for Germanium (Ge) thin film epitaxy of semiconductors. It is used to deposit high purity Ge in the films of Ge, SiGe, GeO2, Ge3N4, GeTe and GeSbTe semiconductors. It deposits high purity Ge films that are free of Carbon and Nitrogen, compared to other Germanium amides such as TDMAGe or TEMAGe that produce GeN. Also abbreviated as DMAGC and pronounced as D-Magic.

Reference: US Patent 2008